A 5.3-GHz 30.1-dBm Fully Integrated CMOS Power Amplifier With High-Power Built-In Linearizer
Author:
Affiliation:
1. Department of Electrical Engineering, National Taiwan Normal University, Taipei, Taiwan
Funder
Ministry of Science and Technology of Taiwan
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Link
http://xplorestaging.ieee.org/ielx7/9944983/10097276/10004859.pdf?arnumber=10004859
Reference15 articles.
1. Linearized Dual-Band Power Amplifiers With Integrated Baluns in 65 nm CMOS for a 2$\, \times \,$2 802.11n MIMO WLAN SoC
2. 5-GHz transformer combined class-F?1 power amplifier;nai;Proc IEEE Int Symp Radio-Frequency Integr Technol (RFIT),2016
3. A 5.8 GHz 1 V Linear Power Amplifier Using a Novel On-Chip Transformer Power Combiner in Standard 90 nm CMOS
4. A Highly Linear Dual-Band Mixed-Mode Polar Power Amplifier in CMOS with An Ultra-Compact Output Network
5. A Fully Integrated 26.5 dBm CMOS Power Amplifier for IEEE 802.11a WLAN Standard with on-chip "power inductors"
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1. Reconfigurable 2.4/5.0-GHz Dual-Band CMOS Power Amplifier for WLAN 802.11ax;IEEE Transactions on Circuits and Systems I: Regular Papers;2024-07
2. A 5-GHz Quadrature Switched-Capacitor Power Amplifier With IQ-Cell-Sharing and Serial Transformer Combiner in 28-nm CMOS;IEEE Microwave and Wireless Technology Letters;2024-07
3. A symmetrical fully-integrated CMOS doherty power amplifier;Microelectronics Journal;2024-06
4. A State-of-the-Art Review on CMOS Radio Frequency Power Amplifiers for Wireless Communication Systems;Micromachines;2023-08-01
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