High Linear and Temperature Insensitive GaAs Power Amplifier Operating at 3.3–3.6 GHz Using a Multi-Feedback Branch Bias Circuit
Author:
Affiliation:
1. School of Physics, Xidian University, Xi’an, China
2. School of Microelectronics, Xidian University, Xi’an, China
3. China Academy of Space Technology (Xi’an), Xi’an, China
4. Smarter Micro Corporation, Xi’an, China
Funder
National Key Research and Development Program of China
National Natural Science Foundation of China
Science and Technology Major Project of Shaanxi Province
China Postdoctoral Science Foundation
National Natural Science Foundation of China for Outstanding Young Scholars
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Link
http://xplorestaging.ieee.org/ielx7/9944983/10065598/10004857.pdf?arnumber=10004857
Reference14 articles.
1. Differential HPUE PA for n77 Band with a Cross-Coupled Feed-Forward Gain Control Circuits
2. A CMOS Highly Linear Doherty Power Amplifier With Multigated Transistors
3. Highly Efficient 5.15- to 5.85-GHz Neutralized HBT Power Amplifier for LTE Applications
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