High Linear and Temperature Insensitive GaAs Power Amplifier Operating at 3.3–3.6 GHz Using a Multi-Feedback Branch Bias Circuit-Reference-Cited by-同舟云学术

High Linear and Temperature Insensitive GaAs Power Amplifier Operating at 3.3–3.6 GHz Using a Multi-Feedback Branch Bias Circuit

Published:2023-03 Issue:3 Volume:33 Page:331-334
ISSN:2771-9588
Container-title:IEEE Microwave and Wireless Technology Letters
language:
Short-container-title:IEEE Microw. Wireless Tech. Lett.

Author:

Liu Wen-Liang¹^ORCID,Yi Chu-Peng²^ORCID,Zhang Heng-Shuang³^ORCID,Wang Yu-Chen²^ORCID,Zhou Jiu-Ding²^ORCID,Shi Chun-Zhou²^ORCID,Yang Shao-Hua⁴,Lu Yang²^ORCID,Deng Jing-Ya¹^ORCID,Ma Xiao-Hua²^ORCID,Hao Yue²^ORCID

Affiliation:

1. School of Physics, Xidian University, Xi’an, China

2. School of Microelectronics, Xidian University, Xi’an, China

3. China Academy of Space Technology (Xi’an), Xi’an, China

4. Smarter Micro Corporation, Xi’an, China

Funder

National Key Research and Development Program of China

National Natural Science Foundation of China

Science and Technology Major Project of Shaanxi Province

China Postdoctoral Science Foundation

National Natural Science Foundation of China for Outstanding Young Scholars

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx7/9944983/10065598/10004857.pdf?arnumber=10004857

Reference14 articles.

1. Differential HPUE PA for n77 Band with a Cross-Coupled Feed-Forward Gain Control Circuits

2. A CMOS Highly Linear Doherty Power Amplifier With Multigated Transistors

3. Highly Efficient 5.15- to 5.85-GHz Neutralized HBT Power Amplifier for LTE Applications

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