A Highly Linear Hybrid Class-F/J Filtering Power Amplifier Utilizing Bias Current Boosting Technique in InGaP/GaAs HBT Process-Reference-Cited by-同舟云学术

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A Highly Linear Hybrid Class-F/J Filtering Power Amplifier Utilizing Bias Current Boosting Technique in InGaP/GaAs HBT Process

Published:2023-08-31 Issue: Volume: Page:
ISSN:
Container-title:2023 16th UK-Europe-China Workshop on Millimetre Waves and Terahertz Technologies (UCMMT)
language:
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Author:

Zhu Shi-Yu¹,Liufu Xiaosheng¹,Li Hui-Yang¹,Xu Jin-Xu¹,Xuan Kai²,Zhang Xiu Yin¹

Affiliation:

1. South China University of Technology,Guangzhou,China,510000

2. Shenzhen Lansus Technologies Inc,Shenzhen,China,518052

Funder

Research and Development

China Postdoctoral Science Foundation

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10310306/10310308/10310388.pdf?arnumber=10310388

Reference10 articles.

1. A 2-$\mu{\hbox{m}}$ InGaP/GaAs Class-J Power Amplifier for Multi-Band LTE Achieving 35.8-dB Gain, 40.5% to 55.8% PAE and 28-dBm Linear Output Power

2. Highly Efficient HBT Power Amplifier Using High-Q Single- and Two-Winding Transformer With IMD3 Cancellation

3. A Highly Efficient Linear Multimode Multiband Class-J Power Amplifier Utilizing GaAs HBT for Handset Modules

4. A Highly Linear GaN MMIC Doherty Power Amplifier Based on Phase Mismatch Induced AM–PM Compensation

5. A CMOS Highly Linear Doherty Power Amplifier With Multigated Transistors

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