A Compact <i>W</i>-Band Power Amplifier With a Peak PAE of 21.1% in 65-nm CMOS Technology-Reference-Cited by-同舟云学术

A Compact W-Band Power Amplifier With a Peak PAE of 21.1% in 65-nm CMOS Technology

Published:2023-06 Issue:6 Volume:33 Page:703-706
ISSN:2771-9588
Container-title:IEEE Microwave and Wireless Technology Letters
language:
Short-container-title:IEEE Microw. Wireless Tech. Lett.

Author:

Wu Weiping¹,Chen Ruolan¹,Chen Shi¹,Wang Jinze¹,Chen Liang¹^ORCID,Zhang Lei¹^ORCID,Wang Yan¹^ORCID

Affiliation:

1. School of Integrated Circuits, Tsinghua University, Beijing, China

Funder

National High Technology Research and Development Program of China

National Natural Science Foundation of China

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx7/9944983/10144810/10024908.pdf?arnumber=10024908

Reference20 articles.

1. A 77-GHz CMOS Power Amplifier With a Parallel Power Combiner Based on Transmission-Line Transformer

2. A Compact E-Band Power Amplifier With Gain-Boosting and Efficiency Enhancement

3. High-Efficiency E-Band Power Amplifiers and Transmitter Using Gate Capacitance Linearization in a 65-nm CMOS Process

4. A 77 GHz Frequency Doubling Two-Path Phased-Array FMCW Transceiver for Automotive Radar

5. An E-band compact power amplifier for future array-based backhaul networks in 22nm FD-SOI;celik;Proc IEEE Radio Freq Integr Circuits Symp (RFIC),2019

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A W-Band Amplifier in FinFET Technology;2024 IEEE 24th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF);2024-01-21

2. Ka-Band CMOS Stacked-FET Power Amplifier With Pre-Distorted Driver Stage for 5G Applications;IEEE Access;2024

3. A 110 GHz Feedback Amplifier Design Based on Quasi-Linear Analysis;Electronics;2023-09-04