Optimised switching of a SiC MOSFET in a VSI using the body diode and additional Schottky barrier diode
Author:
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/7295686/7309048/07309102.pdf?arnumber=7309102
Cited by 12 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Medium-Voltage Co-Packaged Charge-Balanced GaN SHJ-SBD with a SiC MOSFET in a Chopper Power Module;2023 IEEE Energy Conversion Congress and Exposition (ECCE);2023-10-29
2. High Performance 3.3KV 4H-SiC MOSFET with a Floating Island and Hetero Junction Diode;2023 International Conference on Electronics, Information, and Communication (ICEIC);2023-02-05
3. High Performance 3.3 kV SiC MOSFET Structure with Built-In MOS-Channel Diode;Energies;2022-09-22
4. 4H-SiC Double Trench MOSFET with Split Heterojunction Gate for Improving Switching Characteristics;Materials;2021-06-25
5. Methodology for Enhanced Surge Robustness of 1.2kV SiC MOSFET Body Diode;IEEE Journal of Emerging and Selected Topics in Power Electronics;2021
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