Performance Analysis of Double Gate Junctionless TFET with respect to different high-k materials and oxide thickness-Reference-Cited by-同舟云学术

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Performance Analysis of Double Gate Junctionless TFET with respect to different high-k materials and oxide thickness

Published:2022-02-12 Issue: Volume: Page:
ISSN:
Container-title:2022 2nd International Conference on Artificial Intelligence and Signal Processing (AISP)
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Author:

Raut Pratikhya¹,Nanda Umakanta¹,Panda Deepak Kumar¹,Nguyen Hieu Pham Trung²

Affiliation:

1. VIT-AP University,Microelectronics and VLSI Design group,Vijayawada,India,522237

2. New Jersey Institute of Technology

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9760501/9760516/09760584.pdf?arnumber=9760584

Reference16 articles.

1. Effect of asymmetric gate–drain overlap on ambipolar behavior of double-gate TFET and its impact on HF performances

2. Enhancement Mode (E-Mode) AlGaN/GaN MOSFET With $10^{-13}$ A/mm Leakage Current and $10^{12}$ ON/OFF Current Ratio

3. The Dual Effects of Gate Dielectric Constant in Tunnel FETs

4. Digital Performance Assessment of the Dual-Material Gate GaAs/InAs/Ge Junctionless TFET

5. Investigation Into Gate-to-Source Capacitance Induced by Highly Efficient Band-to-Band Tunneling in p-Channel Ge Epitaxial Tunnel Layer Tunnel FET

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. An iTFET with Control Gate for Low Power Applications in RF and Digital Circuits;2023 IEEE 15th International Conference on ASIC (ASICON);2023-10-24

2. A High Schottky Barrier iTFET with Control Gate for Low Power Application;2023-05-31

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