Comparing Hexagonal and Circular Cell designs for SiC MPS Diode: The Curvature Effect on Avalanche Capability-Reference-Cited by-同舟云学术

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Comparing Hexagonal and Circular Cell designs for SiC MPS Diode: The Curvature Effect on Avalanche Capability

Published:2021-08-25 Issue: Volume: Page:
ISSN:
Container-title:2021 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)
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Author:

Liu Li¹,Ren Na¹,Wu Jiupeng¹,Zhu Zhengyun¹,Xu Hongyi¹,Guo Qing¹,Sheng Kuang¹

Affiliation:

1. College of Electrical Engineering, Zhejiang Univerisity,Hangzhou,China

Funder

Guangdong Key Research and Development Program of China

National Natural Science Foundation of China

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9655996/9655997/09656034.pdf?arnumber=9656034

Reference12 articles.

1. A Surge Current Stable and Avalanche Rugged SiC Merged pn Schottky Diode Blocking 600V Especially Suited for PFC Applications

2. 1.2-kV 4H-SiC Merged PiN Schottky Diode With Improved Surge Current Capability

3. Junction Temperatures under Breakdown Condition

4. An Analytical Model With 2-D Effects for 4H-SiC Trenched Junction Barrier Schottky Diodes

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