Degradation behavior and mechanism of SiC power MOSFETs by total ionizing dose irradiation under different gate voltages
Author:
Funder
National Key Research and Development Plan
Key Realm R&D Program of Guangdong Province
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9655996/9655997/09656082.pdf?arnumber=9656082
Reference16 articles.
1. A Deep Insight Into the Degradation of 1.2-kV 4H-SiC mosfets Under Repetitive Unclamped Inductive Switching Stresses
2. Threshold voltage extraction methods for MOS transistors
3. Operation and Modeling of the MOS Transistor[M];tsividis;McGraw-Hill Inc,1987
4. Trap Analysis Based on Low-Frequency Noise for SiC Power MOSFETs Under Repetitive Short-Circuit Stress
5. Degradation Behavior and Defect Analysis for SiC Power MOSFETs Based on Low-Frequency Noise Under Repetitive Power-Cycling Stress
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3. Dynamic Degradation of Planar-Gate SiC MOSFETs After Total Ionizing Dose Radiation;IEEE Transactions on Electron Devices;2024-07
4. Observations on Short-Circuit and Avalanche Robustness of Asymmetric trench-gate SiC MOSFETs after γ-ray Radiation;2024 IEEE 10th International Power Electronics and Motion Control Conference (IPEMC2024-ECCE Asia);2024-05-17
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