A Survey on Modeling of SiC IGBT
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Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9655996/9655997/09656094.pdf?arnumber=9656094
Reference33 articles.
1. Design and fabrication of 10-kV silicon–carbide p-channel IGBTs with hexagonal cells and step space modulated junction termination extension*
2. A Novel Silicon Carbide Accumulation Channel Injection Enhanced Gate Transistor With Buried Barrier Under Shielding Region
3. Optimized P-emitter doping for switching-off loss of superjunction 4H-SiC IGBTs;shen;China International Forum on Solid State Lighting International Forum on Wide Bandgap Semiconductors China,2017
4. Operating Principles, Design Considerations, and Experimental Characteristics of High-Voltage 4H-SiC Bidirectional IGBTs
5. Analysis and compact modeling of temperature-dependent switching in SiC IGBT circuits
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1. GaN and SiC Device Characterization by a Dedicated Embedded Measurement System;Electronics;2023-03-25
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