Artificial Neural Network-Based Compact Model for Circuit Simulation of a 4- Transistor Active Pixel Sensor Including Conversion Gain Prediction-Reference-Cited by-同舟云学术

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Artificial Neural Network-Based Compact Model for Circuit Simulation of a 4- Transistor Active Pixel Sensor Including Conversion Gain Prediction

Published:2024-01-28 Issue: Volume: Page:1-4
ISSN:
Container-title:2024 International Conference on Electronics, Information, and Communication (ICEIC)
language:
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Author:

Kim Yohan¹,Kim SoYoung²

Affiliation:

1. College of Information and Communication Engineering, Sungkyunkwan University,Department of Semiconductor and Display Engineering,Suwon,South Korea,16419

2. College of Information and Communication Engineering, Sungkyunkwan University,Suwon,South Korea,16419

Funder

National Research Foundation of Korea (NRF)

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10457047/10457087/10457179.pdf?arnumber=10457179

Reference10 articles.

1. Effect and Limitation of Pinned Photodiode

2. A 1Gpixel 10FPS CMOS image sensor using pixel array high-speed readout technology

3. HiSIM-HV: A Compact Model for Simulation of High-Voltage MOSFET Circuits

4. Staggered Pixel Layout to Reduce Area and Increase Full Well Capacity in CMOS Image Sensors

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