ICCAD Tutorial Session Paper Ferroelectric FET Technology and Applications: From Devices to Systems-Reference-Cited by-同舟云学术

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ICCAD Tutorial Session Paper Ferroelectric FET Technology and Applications: From Devices to Systems

Published:2021-11-01 Issue: Volume: Page:
ISSN:
Container-title:2021 IEEE/ACM International Conference On Computer Aided Design (ICCAD)
language:
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Author:

Amrouch Hussam,Gao Di,Hu Xiaobo Sharon,Kazemi Arman,Laguna Ann Franchesca,Ni Kai,Niemier Michael,Sharifi Mohammad Mehdi,Thomann Simon,Yin Xunzhao,Zhuo Cheng

Funder

German Research Foundation

DARPA

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9643423/9643432/09643578.pdf?arnumber=9643578

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Double-gated ferroelectric-gate field-effect-transistor for multi-bit content-addressable memories;Microelectronics Journal;2024-01

2. A Reconfigurable FeFET Content Addressable Memory for Multi-State Hamming Distance;IEEE Transactions on Circuits and Systems I: Regular Papers;2023-06

3. Wurtzite and fluorite ferroelectric materials for electronic memory;Nature Nanotechnology;2023-04-27

4. Towards the understanding of ferroelectric-intrinsic variability and reliability issues on MCAM;2023 IEEE International Reliability Physics Symposium (IRPS);2023-03

5. COSIME;Proceedings of the 41st IEEE/ACM International Conference on Computer-Aided Design;2022-10-30

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