On-Wafer Investigation of Avalanche Robustness in 1.3 kV GaN-on-GaN P-N Diode Under Unclamped Inductive Switching Stress-Reference-Cited by-同舟云学术

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On-Wafer Investigation of Avalanche Robustness in 1.3 kV GaN-on-GaN P-N Diode Under Unclamped Inductive Switching Stress

Published:2021-11-07 Issue: Volume: Page:
ISSN:
Container-title:2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)
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Author:

Shankar Bhawani,Zeng Ke,Gunning Brendan,Lee Kwang Jae,Martinez Rafael Perez,Meng Chuanzhe,Zhou Xin Yu,Flicker Jack,Binder Andrew,Dickerson Jeramy Ray,Kaplar Robert,Chowdhury Srabanti

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9645059/9645074/09645154.pdf?arnumber=9645154

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Study of Avalanche Behavior in 3 kV GaN Vertical P-N Diode Under UIS Stress for Edge-termination Optimization;2022 IEEE International Reliability Physics Symposium (IRPS);2022-03

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