Etched and Regrown Vertical GaN Junction Barrier Schottky Diodes-Reference-Cited by-同舟云学术

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Etched and Regrown Vertical GaN Junction Barrier Schottky Diodes

Published:2021-11-07 Issue: Volume: Page:
ISSN:
Container-title:2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)
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Author:

Binder Andrew T.,Pickrell Greg W.,Allerman Andrew A.,Dickerson Jeramy R.,Yates Luke,Steinfeldt Jeffrey,Glaser Caleb,Crawford Mary H.,Armstrong Andrew,Sharps Paul,Kaplar Robert J.

Funder

Vehicle Technologies Office

Sandia National Laboratories

U.S. Department of Energy

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9645059/9645074/09645135.pdf?arnumber=9645135

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Optimization of Step-Etched Junction Termination Extensions for Vertical GaN Devices;IEEE Transactions on Electron Devices;2024

2. Vertical GaN MOSFET Power Devices;Micromachines;2023-10-16

3. Design and fabrication of vertical GaN junction barrier Schottky rectifiers using Mg ion implantation;Japanese Journal of Applied Physics;2023-09-15

4. Selective area doping of GaN toward high-power applications;Journal of Physics D: Applied Physics;2023-06-13

5. Analysis of Vertical GaN JBS and p-n Diodes by Mg Ion Implantation and Ultrahigh-Pressure Annealing;IEEE Transactions on Electron Devices;2023

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