Characteristics and utilization of a new class of low on-resistance MOS-gated power device-Reference-Cited by-同舟云学术

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Characteristics and utilization of a new class of low on-resistance MOS-gated power device

Published:2001 Issue:5 Volume:37 Page:1282-1289
ISSN:0093-9994
Container-title:IEEE Transactions on Industry Applications
language:
Short-container-title:IEEE Trans. on Ind. Applicat.

Author:

Jih-Sheng Lai ,Byeng-Mun Song ,Rui Zhou ,Hefner A.,Berning D.W.,Chih-Chieh Shen

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Industrial and Manufacturing Engineering,Control and Systems Engineering

Link

http://xplorestaging.ieee.org/ielx5/28/20592/00952503.pdf?arnumber=952503

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Fundamental Comparison of Efficiencies of Voltage Source Converter Phase-Leg Configurations with Super-Junction MOSFETs;2022 IEEE 1st Industrial Electronics Society Annual On-Line Conference (ONCON);2022-12-09

2. Gate driver power supply arrangement for cascode‐connected super‐junction MOSFETs in a bridge‐leg;Electronics Letters;2022-11-07

3. Comparison of SiC Voltage Source Inverters Using Synchronous Rectification and Freewheeling Diode;IEEE Transactions on Industrial Electronics;2018-02

4. Experimental Verification of a Battery Energy Storage System for Integration with Photovoltaic Generators;Advances in Power Electronics;2017-01-24

5. Temperature and Switching Rate Dependence of Crosstalk in Si-IGBT and SiC Power Modules;IEEE Transactions on Industrial Electronics;2016-02

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