Gate driver power supply arrangement for cascode‐connected super‐junction MOSFETs in a bridge‐leg
Author:
Affiliation:
1. Department of Electronic and Electrical Engineering University of Strathclyde Glasgow UK
2. Department of Electrical and Electronic Engineering University of Bristol Bristol UK
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1049/ell2.12667
Reference15 articles.
1. Characteristics and utilization of a new class of low on-resistance MOS-gated power device
2. Pfost M. Unger C. Cretu G. et al.:Short‐circuit safe operating area of superjunction MOSFETs. In:Proceedings of 28th International Symposium Power Semiconductor Devices ICs Prague Czech Republic(2016)
3. Matched Pair of CoolMOS Transistor With SiC-Schottky Diode—Advantages in Application
4. System and method for reducing body diode conduction;DeWitt D.B.;US Patent No,2009
5. Improving the Third Quadrant Operation of Superjunction MOSFETs by Using the Cascode Configuration
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