A Flexible Memristor Model With Electronic Resistive Switching Memory Behavior and Its Application in Spiking Neural Network-Reference-Cited by-同舟云学术

A Flexible Memristor Model With Electronic Resistive Switching Memory Behavior and Its Application in Spiking Neural Network

Published:2023-01 Issue:1 Volume:22 Page:52-62
ISSN:1536-1241
Container-title:IEEE Transactions on NanoBioscience
language:
Short-container-title:IEEE Trans.on Nanobioscience

Author:

Ji Xiaoyue¹,Lai Chun Sing²^ORCID,Zhou Guangdong³,Dong Zhekang⁴^ORCID,Qi Donglian¹^ORCID,Lai Loi Lei⁵^ORCID

Affiliation:

1. College of Electrical Engineering, Zhejiang University, Hangzhou, China

2. Department of Electronic and Electrical Engineering, Brunel University London, London UB8 3PH, U.K.

3. College of Artificial Intelligence, Southwest University, Chongqing, China

4. School of Electronics and Information, Hangzhou Dianzi University, Hangzhou, China

5. School of Automation, Guangdong University of Technology, Guangzhou, China

Funder

National Natural Science Foundation of China

Natural Science Foundation of Zhejiang Province

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Computer Science Applications,Pharmaceutical Science,Biomedical Engineering,Medicine (miscellaneous),Bioengineering,Biotechnology

Link

http://xplorestaging.ieee.org/ielx7/7728/10003093/09715069.pdf?arnumber=9715069

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4. Nanoscale Memristor Device as Synapse in Neuromorphic Systems

5. Memristive circuit design of brain-like emotional learning and generation;wang;IEEE Trans Cybern,2021

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