First Comparison of Active and Passive Load Pull at W-Band
Author:
Affiliation:
1. University of California,ECE Department,Santa,Barbara
Funder
Office of Naval Research
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10278504/10278621/10279609.pdf?arnumber=10279609
Reference5 articles.
1. W-band passive load pull system for on-wafer characterization of high power density N-polar GaN devices based on output match and drive power requirements vs. gate width
2. First Demonstration of Four-Finger N-polar GaN HEMT Exhibiting Record 712-mW Output Power With 31.7% PAE at 94 GHz
3. A $W$-Band On-Wafer Active Load–Pull System Based on Down-Conversion Techniques
4. Record RF Power Performance at 94 GHz From Millimeter-Wave N-Polar GaN-on-Sapphire Deep-Recess HEMTs
5. W-Band Power Performance of SiN-Passivated N-Polar GaN Deep Recess HEMTs
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