W-band passive load pull system for on-wafer characterization of high power density N-polar GaN devices based on output match and drive power requirements vs. gate width-Reference-Cited by-同舟云学术

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W-band passive load pull system for on-wafer characterization of high power density N-polar GaN devices based on output match and drive power requirements vs. gate width

Published:2016-05 Issue: Volume: Page:
ISSN:
Container-title:2016 87th ARFTG Microwave Measurement Conference (ARFTG)
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Author:

Guidry Matthew,Wienecke Steven,Romanczyk Brian,Zheng Xun,Li Haoran,Ahmadi Elaheh,Hestroffer Karine,Keller Stacia,Mishra Umesh K.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/7497414/7501936/07501955.pdf?arnumber=7501955

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Inductive Source Degeneration in 40-nm GaN HEMTs for Operation Above 100 GHz;IEEE Transactions on Microwave Theory and Techniques;2024-01

2. Improving the Precision of On-Wafer W-Band Scalar Load-Pull Measurements;IEEE Journal of Microwaves;2023-07

3. First Comparison of Active and Passive Load Pull at W-Band;2023 101st ARFTG Microwave Measurement Conference (ARFTG);2023-06-16

4. First Demonstration of Four-Finger N-polar GaN HEMT Exhibiting Record 712-mW Output Power With 31.7% PAE at 94 GHz;IEEE Microwave and Wireless Technology Letters;2023-06

5. Record RF Power Performance at 94 GHz From Millimeter-Wave N-Polar GaN-on-Sapphire Deep-Recess HEMTs;IEEE Transactions on Electron Devices;2023-04

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