Monitoring IGBT Module Bond Wire Fatigue Use Turn-Off Time
Author:
Affiliation:
1. (School of Mechatronics Engineering and Automation), Shanghai University,Shanghai Key Lab of Power Station Automation Technology,Shanghai,China
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10311571/10311610/10312632.pdf?arnumber=10312632
Reference21 articles.
1. Condition monitoring IGBT m odule bond wire lift-off using measurable signals;mingxing;Proceedings of Th e 7th International Power Electronics and Motion Control Conference,0
2. Study of Bonding Wire Failure Effects on External Measurable Signals of IGBT Module;w;IEEE Trans Device Mater Reliab,2014
3. A Novel Bond Wire Fault Detection Method for IGBT Modules Based on Turn-on Gate Voltage Overshoot;y;IEEE Trans Power Electron,2021
4. Monitoring Bond Wires Fatigue of Multichip IGBT Module Using Time Duration of the Gate Charge;k;IEEE Trans Power Electron,2021
5. Online Condition Monitoring for B ond Wire Degradation of IGBT Modules in Three-Level Neutral-Point-C lamped Converters;x;IEEE Trans Ind Electron,2021
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