Electric Field Impact on Lateral Charge Diffusivity in Charge Trapping 3D NAND Flash Memory
Author:
Affiliation:
1. Samsung Electronics,Flash PE Team,Hwasung,Korea
2. Samsung Electronics,Flash Product & Technology,Hwasung,Korea
3. Seoul National University,Department of Electrical and Computer Engineering,Seoul,Korea
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9764406/9764408/09764447.pdf?arnumber=9764447
Reference18 articles.
1. Analysis of read disturbance mechanism in retention of sub-20 nm NAND flash memory
2. Effects of Lateral Charge Spreading on the Reliability of TANOS (TaN/AlO/SiN/Oxide/Si) NAND Flash Memory
3. Study of fast initial charge loss and it’s impact on the programmed states vt distribution of charge-trapping NAND flash;chen;IEDM Tech Dig,2010
4. Impact of lateral charge migration on the retention performance of planar and 3D SONOS devices
5. Investigation of Retention Characteristics for Trap-Assisted Tunneling Mechanism in Sub 20-nm NAND Flash Memory
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