Study and Analysis on CNTFET Design and Process Parameters for Performance Optimization-Reference-Cited by-同舟云学术

Study and Analysis on CNTFET Design and Process Parameters for Performance Optimization

Published:2022-11-23 Issue: Volume: Page:
ISSN:
Container-title:2022 International Conference on Electrical and Computing Technologies and Applications (ICECTA)
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Author:

Abdul Hadi M. F.¹,Hussin H.¹,Muhamad M.¹,Wahab Y. Abdul²

Affiliation:

1. Universiti Teknologi MARA,School of Electrical Engineering College of Engineering,Selangor,Malaysia

2. Nanotechnology and Catalysis Research Centre, Universiti Malaya,Kuala Lumpur,Malaysia

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9989539/9990040/09990357.pdf?arnumber=9990357

Reference12 articles.

1. Fabrication of carbon nanotube field-effect transistors in commercial silicon manufacturing facilities

2. Carbon Nanotube Field Effect Transistors (CNFET) HSPICE Model;lin,2009

3. Various Power Dissipation Mechanisms and Leakage Current Reduction Techniques in Deep-Submicron Technology;sudhakar;International Journal of Engineering Science & Advanced Technology,2013

4. Optimizing CNTFET design parameters using Taguchi method for high performance and low power applications

5. Characterizing the Carbon Nanotube Field Effect Transistor: a geometric variation study;syamira,0

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