A Single Supply, High Linearity 2-W PA MMIC for WLAN Applications Using Quasi-Enhancement Mode PHEMTs-Reference-Cited by-同舟云学术

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A Single Supply, High Linearity 2-W PA MMIC for WLAN Applications Using Quasi-Enhancement Mode PHEMTs

Published:2006-11 Issue:11 Volume:16 Page:618-620
ISSN:1531-1309
Container-title:IEEE Microwave and Wireless Components Letters
language:
Short-container-title:IEEE Microw. Wireless Compon. Lett.

Author:

Lin C.-H.,Liu H.-Z.,Chu C.-K.,Huang H.-K.,Liu C.-C.,Chang C.-H.,Wu C.-L.,Chang C.-S.,Wang Y.-H.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics

Link

http://xplorestaging.ieee.org/ielx5/7260/36133/01717522.pdf?arnumber=1717522

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Bandpass Power Amplifier Applying Transformer-Based Filtering Combiner in 0.5-μm GaAs pHEMT;IEEE Microwave and Wireless Technology Letters;2023-07

2. A 3.5-GHz-Band GaAs HBT Stage-Bypass-Type Step-Gain Amplifier Using Base-Collector Diode Switches and Its Application to a WiMAX HBT MMIC Power Amplifier Module;IEICE Transactions on Electronics;2015

3. A Broadband Injection-Locking Class-E Power Amplifier;IEEE Transactions on Microwave Theory and Techniques;2012-10

4. A High Efficiency Broadband Class-E Power Amplifier Using a Reactance Compensation Technique;IEEE Microwave and Wireless Components Letters;2010-09

5. Al0.2Ga0.8As/In0.15Ga0.85As MOSPHEMT with low temperature LPD-deposited Al2O3 as gate dielectric;Solid-State Electronics;2010-08

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