A High Gain and Low Supply Voltage LNA for the Direct Conversion Application With 4-KV HBM ESD Protection in 90-nm RF CMOS-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

A High Gain and Low Supply Voltage LNA for the Direct Conversion Application With 4-KV HBM ESD Protection in 90-nm RF CMOS

Published:2006-11 Issue:11 Volume:16 Page:612-614
ISSN:1531-1309
Container-title:IEEE Microwave and Wireless Components Letters
language:
Short-container-title:IEEE Microw. Wireless Compon. Lett.

Author:

Chang C.-P.,Hou J.-A.,Su J.,Chen C.-W.,Liou T.-S.,Wong S.-C.,Wang Y.-H.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics

Link

http://xplorestaging.ieee.org/ielx5/7260/36133/01717520.pdf?arnumber=1717520

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A 0.6-V $+$4 dBm IIP3 $LC$ Folded Cascode CMOS LNA With $g_{m}$ Linearization;IEEE Transactions on Circuits and Systems II: Express Briefs;2013-03

2. A V-band low-noise amplifier co-designed with ESD network in 65-nm RF CMOS;Microwave and Optical Technology Letters;2012-01-20

3. Novel High Robustness RF ESD Protection Circuits Applied to 5.8-GHz GaAs-Based HBT Amplifiers;IEEE Transactions on Microwave Theory and Techniques;2011-03

4. A Multi-ESD-Path Low-Noise Amplifier With a 4.3-A TLP Current Level in 65-nm CMOS;IEEE Transactions on Microwave Theory and Techniques;2010-12

5. A low noise amplifier co-designed with ESD protection circuit in 65-nm CMOS;2009 IEEE MTT-S International Microwave Symposium Digest;2009-06

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP