A low noise amplifier co-designed with ESD protection circuit in 65-nm CMOS-Reference-Cited by-同舟云学术

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A low noise amplifier co-designed with ESD protection circuit in 65-nm CMOS

Published:2009-06 Issue: Volume: Page:
ISSN:
Container-title:2009 IEEE MTT-S International Microwave Symposium Digest
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Author:

Tsai Ming-Hsien,Hsu Shawn S. H.,Tan Kevin K.W.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/5159259/5165586/05165761.pdf?arnumber=5165761

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Impact of ESD Protection and Power Supply Decoupling on 10 GHz Low Noise Amplifier;Proceedings of the 27th Symposium on Integrated Circuits and Systems Design - SBCCI '14;2014

2. A 16-kV HBM RF ESD Protection Codesign for a 1-mW CMOS Direct Conversion Receiver Operating in the 2.4-GHz ISM Band;IEEE Transactions on Microwave Theory and Techniques;2011-09

3. Full band UWB LNA with 8kV+ ESD protection in RFCMOS;2011 IEEE Radio and Wireless Symposium;2011-01

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