Millimeter-wave high-power 0.25-/spl mu/m gate-length AlGaN/GaN HEMTs on SiC substrates-Reference-Cited by-同舟云学术

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Millimeter-wave high-power 0.25-/spl mu/m gate-length AlGaN/GaN HEMTs on SiC substrates

Published:2003-03 Issue:3 Volume:13 Page:93-95
ISSN:1531-1309
Container-title:IEEE Microwave and Wireless Components Letters
language:
Short-container-title:IEEE Microw. Wireless Compon. Lett.

Author:

Schwindt R.S.,Kumar V.,Kuliev A.,Simin G.,Yang J.W.,Khan M.A.,Muir M.E.,Adesida I.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics

Link

http://xplorestaging.ieee.org/ielx5/7260/26629/01187392.pdf?arnumber=1187392

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High Current and Linearity AlGaN/GaN/-Graded-AlGaN:Si-doped/GaN Heterostructure for Low Voltage Power Amplifier Application;IEEE Electron Device Letters;2023-04

2. Fabrication and Characterization of a Novel Varistor Based on AlInGaN/GaN Heterojunction Epitaxy on High Resistance Silicon (111) Substrates;IEEE Transactions on Electron Devices;2022-08

3. Linear broadband GaN MMICs for Ku-band Applications;2006 IEEE MTT-S International Microwave Symposium Digest;2006-06

4. High-Power-Density 0.25 µm Gate-Length AlGaN/GaN High-Electron-Mobility Transistors on Semi-Insulating 6H–SiC Substrates;Japanese Journal of Applied Physics;2006-01-10

5. Gallium Nitride for Electronics;Encyclopedia of RF and Microwave Engineering;2005-04-15

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