A 6-18-GHz GaN High Power Amplifier with Excellent Gain Flatness
Author:
Affiliation:
1. Ho Chi Minh City University of Technology, VNU-HCM,Faculty of Electrical and Electronic Engineering
2. Wavepia Co., Ltd
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10299724/10299808/10299882.pdf?arnumber=10299882
Reference8 articles.
1. Stability analysis and numerical simulation of multidevice amplifiers
2. Analysis and Design of Stacked-FET Millimeter-Wave Power Amplifiers
3. A 6–18 GHz 40 W Reactively Matched GaN MMIC Power Amplifier
4. 6–18-GHz High Harmonic Suppression GaN Power Amplifier MMIC for Integrated Electronic Warfare Systems
5. A 6–18-GHz GaN Reactively Matched Distributed Power Amplifier Using Simplified Bias Network and Reduced Thermal Coupling
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