Light Particle-Induced Single Event Degradation in SDRAMs-Reference-Cited by-同舟云学术

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Light Particle-Induced Single Event Degradation in SDRAMs

Published:2006-12 Issue:6 Volume:53 Page:3544-3549
ISSN:0018-9499
Container-title:IEEE Transactions on Nuclear Science
language:
Short-container-title:IEEE Trans. Nucl. Sci.

Author:

David J.-P.,Bezerra F.,Lorfevre E.,Nuns T.,Inguimbert C.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Nuclear Energy and Engineering,Nuclear and High Energy Physics

Link

http://xplorestaging.ieee.org/ielx5/23/4033181/04033393.pdf?arnumber=4033393

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Technology Dependence of Stuck Bits and Single-Event Upsets in 110-, 72-, and 63-nm SDRAMs;IEEE Transactions on Nuclear Science;2023-08

2. Technology Impact on Neutron-Induced Effects in SDRAMs: A Comparative Study;2021 16th International Conference on Design & Technology of Integrated Systems in Nanoscale Era (DTIS);2021-06-28

3. Electron-Induced Upsets and Stuck Bits in SDRAMs in the Jovian Environment;IEEE Transactions on Nuclear Science;2021-05

4. Radiation-Induced Variable Retention Time in Dynamic Random Access Memories;IEEE Transactions on Nuclear Science;2020-01

5. Stuck and Weakened Bits in SDRAM from a Heavy-Ion Microbeam;2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS);2019-09

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