On the origin of the mobility reduction in bulk-Si, UTBOX-FDSOI and SiGe devices with ultrathin-EOT dielectrics-Reference-Cited by-同舟云学术

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On the origin of the mobility reduction in bulk-Si, UTBOX-FDSOI and SiGe devices with ultrathin-EOT dielectrics

Published:2011-04 Issue: Volume: Page:
ISSN:
Container-title:Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications
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Author:

Ragnarsson L.-A.,Mitard J.,Kauerauf T.,De Keersgieter A.,Schram T.,Rohr E.,Collaert N.,Jurczak M.,Hong S.-H.,Tseng J.,Wang W.-E.,Trojman L.,Bourdelle K. K.,Nguyen B.-Y.,Absil P.,Hoffmann T. Y.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/5779880/5872202/05872255.pdf?arnumber=5872255

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Mobility extraction for short channel UTBB-FDSOI MOSFETs under back bias using an accurate inversion charge density model;Solid-State Electronics;2019-04

2. CMOS integration of high-k/metal gate transistors in diffusion and gate replacement (D&GR) scheme for dynamic random access memory peripheral circuits;Japanese Journal of Applied Physics;2018-03-16

3. Threshold voltage control in TmSiO/HfO2 high-k/metal gate MOSFETs;Solid-State Electronics;2015-06

4. Multi-scale strategy for high-k/metal-gate UTBB-FDSOI devices modeling with emphasis on back bias impact on mobility;Journal of Computational Electronics;2013-11-28

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