Investigation of series resistances, interface coupling and irradiation effects on the transconductance of fully-depleted SOI-MOSFETs-Reference-Cited by-同舟云学术

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Investigation of series resistances, interface coupling and irradiation effects on the transconductance of fully-depleted SOI-MOSFETs

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Container-title:1991 IEEE International SOI Conference Proceedings
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Author:

Ouisse T.,Cristoloveanu S.,Borel G.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx2/591/4230/00162851.pdf?arnumber=162851

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Light Dependency of Modified Source FDSOI based Photo-detector;2021 7th International Conference on Signal Processing and Communication (ICSC);2021-11-25

2. A Novel One-Transistor Active Pixel Sensor With In-Situ Photoelectron Sensing in 22 nm FD-SOI Technology;IEEE Electron Device Letters;2019-05

3. MoS2/Silicon-on-Insulator Heterojunction Field-Effect-Transistor for High-Performance Photodetection;IEEE Electron Device Letters;2019-03

4. Low‐frequency noise behavior of γ‐irradiated partially depleted silicon‐on‐insulatorn‐channel metal‐oxide‐semiconductor transistors;Applied Physics Letters;1993-09-20

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