1.7 kV/1.0 mΩcm2normally-off vertical GaN transistor on GaN substrate with regrown p-GaN/AlGaN/GaN semipolar gate structure
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Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/7824662/7838021/07838385.pdf?arnumber=7838385
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3. Mobility Extraction Using Improved Resistance Partitioning Methodology for Normally-OFF Fully Vertical GaN Trench MOSFETs;Electronics;2024-06-15
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