Monte Carlo benchmark of Ino.53Gao.47As-and Silicon-FinFETs
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Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/8255107/8268301/08268383.pdf?arnumber=8268383
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Computational Study of Temperature Effects on MOSFET Channel Material Benchmarking;IEEE Electron Device Letters;2020-09
2. Comprehensive n- and pMOSFET Channel Material Benchmarking and Analysis of CMOS Performance Metrics Considering Quantum Transport and Carrier Scattering Effects;IEEE Journal of the Electron Devices Society;2020
3. Semi-classical Monte Carlo study of the impact of contact geometry and transmissivity on quasi-ballistic nanoscale Si and In0.53Ga0.47As n-channel FinFETs;Journal of Applied Physics;2019-09-10
4. Computational Study of Geometrical Designs for Source/Drain Contacts to Reduce Parasitic Resistance in Extremely Scaled MOSFETs;IEEE Transactions on Electron Devices;2019-03
5. Performance Comparison of ${n}$ –Type Si Nanowires, Nanosheets, and FinFETs by MC Device Simulation;IEEE Electron Device Letters;2018-11
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