14nm Ferroelectric FinFET technology with steep subthreshold slope for ultra low power applications-Reference-Cited by-同舟云学术

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14nm Ferroelectric FinFET technology with steep subthreshold slope for ultra low power applications

Published:2017-12 Issue: Volume: Page:
ISSN:
Container-title:2017 IEEE International Electron Devices Meeting (IEDM)
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Author:

Krivokapic Z.,Rana U.,Galatage R.,Razavieh A.,Aziz A.,Liu J.,Shi J.,Kim H. J.,Sporer R.,Serrao C.,Busquet A.,Polakowski P.,Muller J.,Kleemeier W.,Jacob A.,Brown D.,Knorr A.,Carter R.,Banna S.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/8255107/8268301/08268393.pdf?arnumber=8268393

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