Full dynamic power diode model including temperature behavior for use in circuit simulators
Author:
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx5/7776/21373/00991249.pdf?arnumber=991249
Cited by 12 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. SOI pMOS drain leakage understanding based on TCAD and measurements;2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD);2023-09-27
2. Electromagnetic Pulse Induced Failure Analysis of GaN HEMT Based Power Amplifier;IEEE Transactions on Power Electronics;2023
3. A Novel IGBT with Double Buffer Layers for High Temperature Operation;2022 IEEE 3rd China International Youth Conference on Electrical Engineering (CIYCEE);2022-11-03
4. Simulation Aided Hardening of Power Diodes to Prevent Single Event Burnout;IEEE Transactions on Electron Devices;2022-09
5. Mechanism Analysis and Multi-Scale Protection Design of GaN HEMT Induced by High-Power Electromagnetic Pulse;Micromachines;2022-08-11
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