Dynamic Read Current Sensing With Amplified Bit-Line Voltage for STT-MRAMs-Reference-Cited by-同舟云学术

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Dynamic Read Current Sensing With Amplified Bit-Line Voltage for STT-MRAMs

Published:2020-03 Issue:3 Volume:67 Page:551-555
ISSN:1549-7747
Container-title:IEEE Transactions on Circuits and Systems II: Express Briefs
language:
Short-container-title:IEEE Trans. Circuits Syst. II

Author:

Ali Mustafa F.^ORCID,Andrawis Robert^ORCID,Roy Kaushik^ORCID

Funder

Semiconductor Research Corporation

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx7/8920/9016282/08710283.pdf?arnumber=8710283

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Dynamic Time-Domain Sensing Scheme for Spin-Orbit Torque MRAM;IEEE Transactions on Electron Devices;2024-07

2. Differential MRAM Sensing Scheme With Magnetoresistance Boosted 4T-2MTJ Bit-Cell;IEEE Transactions on Magnetics;2023-11

3. Resource-Efficient Convolutional Networks: A Survey on Model-, Arithmetic-, and Implementation-Level Techniques;ACM Computing Surveys;2023-07-13

4. Double-Ended Superposition Anti-Noise Resistance Monitoring Write Termination Scheme for Reliable Write Operation in STT-MRAM;IEEE Transactions on Circuits and Systems I: Regular Papers;2023-03

5. Novel multi-bit parallel pipeline-circuit design for STT-MRAM;AIP Advances;2023-02-01

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