Effective Low Leakage 6T and 8T FinFET SRAMs: Using Cells With Reverse-Biased FinFETs, Near-Threshold Operation, and Power Gating
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering
Link
http://xplorestaging.ieee.org/ielx7/8920/9048013/08736268.pdf?arnumber=8736268
Cited by 31 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. A Junctionless Tri-Gate SOI FinFET 8T-SRAM Cell with improved Noise Margin;2023 IEEE Silchar Subsection Conference (SILCON);2023-11-03
2. Seepage Power Aware SBVL Based FinFET Design for SRAM Construction;2023 International Conference on Ambient Intelligence, Knowledge Informatics and Industrial Electronics (AIKIIE);2023-11-02
3. FinFET 6T-SRAM All-Digital Compute-in-Memory for Artificial Intelligence Applications: An Overview and Analysis;Micromachines;2023-07-31
4. Design and Implementation of FinFET 12-T SRAM cell for low power Applications;2023 3rd International Conference on Intelligent Technologies (CONIT);2023-06-23
5. Design and Development of Efficient SRAM Cell Based on FinFET for Low Power Memory Applications;Journal of Electrical and Computer Engineering;2023-06-07
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