A Mini Tutorial of Processing in Memory: From Principles, Devices to Prototypes

Author:

Pan Biao1,Wang Guangyao1ORCID,Zhang He1ORCID,Kang Wang1ORCID,Zhao Weisheng1ORCID

Affiliation:

1. School of Integrated Circuit Science and Engineering, Fert Beijing Institute, Beihang University, Beijing, China

Funder

National Key Research and Development Program of China

Beijing Nova Program from Beijing Municipal Science and Technology Commission

National Natural Science Foundation of China

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Reference84 articles.

1. 13.3 A 22nm 32Mb Embedded STT-MRAM with 10ns Read Speed, 1M Cycle Write Endurance, 10 Years Retention at 150°C and High Immunity to Magnetic Field Interference

2. 22-nm FD-SOI embedded MRAM technology for low-power automotive-grade-L MCU applications;lee;Tech Dig Int Electron Devices Meeting (IEDM),2019

3. Demonstration of highly manufacturable STT-MRAM embedded in 28nm logic;song;Tech Dig Int Electron Devices Meeting (IEDM),2019

4. 1Gbit High Density Embedded STT-MRAM in 28nm FDSOI Technology

5. Phase Change Memory

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