Affiliation:
1. School of Integrated Circuit Science and Engineering, Fert Beijing Institute, Beihang University, Beijing, China
Funder
National Key Research and Development Program of China
Beijing Nova Program from Beijing Municipal Science and Technology Commission
National Natural Science Foundation of China
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering
Reference84 articles.
1. 13.3 A 22nm 32Mb Embedded STT-MRAM with 10ns Read Speed, 1M Cycle Write Endurance, 10 Years Retention at 150°C and High Immunity to Magnetic Field Interference
2. 22-nm FD-SOI embedded MRAM technology for low-power automotive-grade-L MCU applications;lee;Tech Dig Int Electron Devices Meeting (IEDM),2019
3. Demonstration of highly manufacturable STT-MRAM embedded in 28nm logic;song;Tech Dig Int Electron Devices Meeting (IEDM),2019
4. 1Gbit High Density Embedded STT-MRAM in 28nm FDSOI Technology
5. Phase Change Memory
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