A Sidewall Enhanced Trench Poly-Si/SiC Heterojunction Diode with Energy Barrier Height Control Technology
Author:
Affiliation:
1. University of Electronic Science and Technology of China,State Key Laboratory of Electronic Thin Films and Integrated Devices of China,Chengdu,China
Funder
National Science Foundation
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10221568/10221569/10221574.pdf?arnumber=10221574
Reference10 articles.
1. New High-Voltage Unipolar Mode p+ Si/n– 4H-SiC Heterojunction Diode
2. Numerical Study of SiC MOSFET With Integrated n-/n-Type Poly-Si/SiC Heterojunction Freewheeling Diode
3. Ultra-low Von and High Voltage 4H-SiC Heterojunction Diode
4. Novel Low VON Poly-Si/4H-SiC Heterojunction Diode Using Energy Barrier Height Control
5. Recent progress in SiC DMOSFETs and JBS diodes at Cree
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