Recent progress in SiC DMOSFETs and JBS diodes at Cree-Reference-Cited by-同舟云学术

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Recent progress in SiC DMOSFETs and JBS diodes at Cree

Published:2008-11 Issue: Volume: Page:
ISSN:
Container-title:2008 34th Annual Conference of IEEE Industrial Electronics
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Author:

Callanan R.J.,Agarwal A.,Burk A.,Das M.,Hull B.,Husna F.,Powell A.,Richmond J.,Sei-Hyung Ryu ,Qingchun Zhang

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/4749247/4757911/04758417.pdf?arnumber=4758417

Cited by 35 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Comparison of Two Third-Generation 10 kV SiC MOSFET Die’s Switching Performance on a System Level;2024 IEEE 10th International Power Electronics and Motion Control Conference (IPEMC2024-ECCE Asia);2024-05-17

2. Comprehensive Investigation of Promising Techniques to Enhance the Voltage Sharing among SiC MOSFET Strings, Supported by Experimental and Simulation Validations;Electronics;2024-04-13

3. A novel 4H‐SiC accumulation mode MOSFET with ultra‐low specific on‐resistance and improved reverse recovery capability;IET Power Electronics;2023-09-05

4. A Sidewall Enhanced Trench Poly-Si/SiC Heterojunction Diode with Energy Barrier Height Control Technology;2022 10th International Symposium on Next-Generation Electronics (ISNE);2023-05-12

5. A novel optimum variation lateral doping SiC lateral double-diffused metal oxide semiconductor with improved performance;Semiconductor Science and Technology;2022-09-20

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