Investigation on Total-Ionizing-Dose Radiation Response for 700 V Double-RESURF SOI LDMOS
Author:
Affiliation:
1. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China (UESTC), Chengdu, China
2. 58th Research Institute of China Electronics Technology Group Corporation, Wuxi, China
Funder
National Natural Science Foundation of China
Applied Fundamental Research Project of Sichuan Province
Sichuan Science and Technology Program
Fundamental Research Funds for the Central Universities
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Nuclear Energy and Engineering,Nuclear and High Energy Physics
Link
http://xplorestaging.ieee.org/ielx7/23/9777895/09751747.pdf?arnumber=9751747
Reference23 articles.
1. Total ionizing dose effects in MOS oxides and devices
2. Total ionizing dose effects in bipolar devices and circuits
3. An improved model on buried-oxide damage for total-lonizing-dose effect on HV SOI LDMOS;yuan;IEDM Tech Dig,2020
4. Total-Ionizing-Dose Irradiation-Induced Dielectric Field Enhancement for High-Voltage SOI LDMOS
5. Modeling of Total Ionizing Dose Degradation on 180-nm n-MOSFETs Using BSIM3
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Tradeoff Between the Breakdown Voltage and Specific On-Resistance of SOI RESURF LDMOS;2023 IEEE 15th International Conference on ASIC (ASICON);2023-10-24
2. New Insight Into Total-Ionizing-Dose Effect-Induced Breakdown Voltage Degradation for SOI LDMOS: Irradiation Charge Field Modulation;IEEE Transactions on Nuclear Science;2023-04
3. Study of TID radiation effects on the breakdown voltage of buried P-pillar SOI LDMOSFETs with P-top region;Microelectronics Reliability;2022-12
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