Investigation on Total-Ionizing-Dose Radiation Response for 700 V Double-RESURF SOI LDMOS-Reference-Cited by-同舟云学术

Investigation on Total-Ionizing-Dose Radiation Response for 700 V Double-RESURF SOI LDMOS

Published:2022-05 Issue:5 Volume:69 Page:1134-1140
ISSN:0018-9499
Container-title:IEEE Transactions on Nuclear Science
language:
Short-container-title:IEEE Trans. Nucl. Sci.

Author:

Zhou Xin¹^ORCID,Geng Liming¹,Li Yanfei²,Fang Xuelin¹,Wang Zhao¹,Zhu Shaoli²^ORCID,Wu Jianwei²,Qiao Ming¹^ORCID,Zhang Bo¹^ORCID

Affiliation:

1. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China (UESTC), Chengdu, China

2. 58th Research Institute of China Electronics Technology Group Corporation, Wuxi, China

Funder

National Natural Science Foundation of China

Applied Fundamental Research Project of Sichuan Province

Sichuan Science and Technology Program

Fundamental Research Funds for the Central Universities

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Nuclear Energy and Engineering,Nuclear and High Energy Physics

Link

http://xplorestaging.ieee.org/ielx7/23/9777895/09751747.pdf?arnumber=9751747

Reference23 articles.

1. Total ionizing dose effects in MOS oxides and devices

2. Total ionizing dose effects in bipolar devices and circuits

3. An improved model on buried-oxide damage for total-lonizing-dose effect on HV SOI LDMOS;yuan;IEDM Tech Dig,2020

4. Total-Ionizing-Dose Irradiation-Induced Dielectric Field Enhancement for High-Voltage SOI LDMOS

5. Modeling of Total Ionizing Dose Degradation on 180-nm n-MOSFETs Using BSIM3

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Investigation of Double RESURF P-GaN Gate AlGaN/GaN Heterostructure Field-Effect Transistors with Partial N-GaN Channels;Journal of Electronic Materials;2024-03-14

2. New Insight Into Total-Ionizing-Dose Effect-Induced Breakdown Voltage Degradation for SOI LDMOS: Irradiation Charge Field Modulation;IEEE Transactions on Nuclear Science;2023-04

3. Study of TID radiation effects on the breakdown voltage of buried P-pillar SOI LDMOSFETs with P-top region;Microelectronics Reliability;2022-12