Tradeoff Between the Breakdown Voltage and Specific On-Resistance of SOI RESURF LDMOS-Reference-Cited by-同舟云学术

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Tradeoff Between the Breakdown Voltage and Specific On-Resistance of SOI RESURF LDMOS

Published:2023-10-24 Issue: Volume: Page:1-4
ISSN:
Container-title:2023 IEEE 15th International Conference on ASIC (ASICON)
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Author:

Guo Yufeng¹,Yang Kemeng¹,Chen Jing¹,Li Man¹,Jiang Zhengfei¹,Yao Jiafei¹,Zhang Jun¹,Zhang Maolin¹

Affiliation:

1. Nanjing University of Posts and Telecommunications,College of Integrated Circuit Science and Engineering,Nanjing,China

Funder

National Natural Science Foundation of China

Natural Science Foundation of Jiangsu Province

Jiangsu Provincial Key Research and Development Program

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10395907/10395930/10396435.pdf?arnumber=10396435

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. An Ultra-Fast and Precise Automatic Design Framework for Predicting and Constructing High-Performance Shallow-Trench-Isolation LDMOS Device;2024-07-31

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