Voltage-Controlled Oscillator Utilizing Inverse-Mode SiGe-HBT Biasing Circuit for the Mitigation of Single-Event Effects-Reference-Cited by-同舟云学术

Voltage-Controlled Oscillator Utilizing Inverse-Mode SiGe-HBT Biasing Circuit for the Mitigation of Single-Event Effects

Published:2022-06 Issue:6 Volume:69 Page:1242-1248
ISSN:0018-9499
Container-title:IEEE Transactions on Nuclear Science
language:
Short-container-title:IEEE Trans. Nucl. Sci.

Author:

Mishu Pujan K. C.¹^ORCID,Cho Moon-Kyu²,Khachatrian Ani³^ORCID,Buchner Stephen P.³^ORCID,McMorrow Dale³,Paki Pauline⁴,Cressler John D.⁵^ORCID,Song Ickhyun⁶^ORCID

Affiliation:

1. School of Electrical and Computer Engineering, Oklahoma State University, Stillwater, OK, USA

2. Department of Computer Engineering, Korea National University of Transportation, Chungju-si, Republic of Korea

3. U.S. Naval Research Laboratory, Washington, DC, USA

4. Defense Threat Reduction Agency, Fort Belvoir, VA, USA

5. School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, USA

6. Department of Electronic Engineering, Hanyang University, Seoul, Republic of Korea

Funder

Research Fund of Hanyang University

Defense Threat Reduction Agency

“Regional Innovation Strategy (RIS)” through the National Research Foundation of Korea

Ministry of Education

Korea National University of Transportation Industry-Academy Cooperation Foundation in 2021

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Nuclear Energy and Engineering,Nuclear and High Energy Physics

Link

http://xplorestaging.ieee.org/ielx7/23/9798446/09762987.pdf?arnumber=9762987

Reference27 articles.

1. Single-Event Effects in a W-Band (75-110 GHz) Radar Down-Conversion Mixer Implemented in 90 nm, 300 GHz SiGe HBT Technology

2. Optimizing Inverse-Mode SiGe HBTs for Immunity to Heavy-Ion-Induced Single-Event Upset

3. Single-Event Response of the SiGe HBT Operating in Inverse-Mode

4. An Investigation of Single-Event Effects and Potential SEU Mitigation Strategies in Fourth-Generation, 90 nm SiGe BiCMOS

5. An Investigation of Dose Rate and Source Dependent Effects in 200 GHz SiGe HBTs

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