An Investigation of Single-Event Effects and Potential SEU Mitigation Strategies in Fourth-Generation, 90 nm SiGe BiCMOS-Reference-Cited by-同舟云学术

An Investigation of Single-Event Effects and Potential SEU Mitigation Strategies in Fourth-Generation, 90 nm SiGe BiCMOS

Published:2013-12 Issue:6 Volume:60 Page:4175-4183
ISSN:0018-9499
Container-title:IEEE Transactions on Nuclear Science
language:
Short-container-title:IEEE Trans. Nucl. Sci.

Author:

Lourenco Nelson E.,Phillips Stanley D.,England Troy D.,Cardoso Adilson S.,Fleetwood Zachary E.,Moen Kurt A.,McMorrow Dale,Warner Jeffrey H.,Buchner Stephen P.,Paki-Amouzou Pauline,Pekarik Jack,Harame David,Raman Ashok,Turowski Marek,Cressler John D.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Nuclear Energy and Engineering,Nuclear and High Energy Physics

Link

http://xplorestaging.ieee.org/ielx7/23/6678952/06678815.pdf?arnumber=6678815

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1. Simulation and analysis of inverse-mode operation of single event transient mechanisms on NPN-SiGe HBT;Physica Scripta;2024-04-23

2. Laser-induced single event effect on SiGe BiCMOS low noise amplifier;Acta Physica Sinica;2024

3. Numerical simulation of single-particle transients in low-noise amplifiers based on silicon-germanium heterojunction bipolar transistors and inverse-mode structures;Acta Physica Sinica;2024

4. Effects of Collector Profile on the SET Response of 130-nm High-Speed and High-Breakdown SiGe HBTs;IEEE Transactions on Nuclear Science;2023

5. Voltage-Controlled Oscillator Utilizing Inverse-Mode SiGe-HBT Biasing Circuit for the Mitigation of Single-Event Effects;IEEE Transactions on Nuclear Science;2022-06