Deep-Level Transient Spectroscopy and Radiation Detection Performance Studies on Neutron Irradiated 250-μm-Thick 4H-SiC Epitaxial Layers
Author:
Affiliation:
1. Department of Electrical Engineering, University of South Carolina (UofSC), Columbia, SC, USA
2. Department of Mechanical and Nuclear Engineering, Kansas State University, Manhattan, KS, USA
Funder
University of South Carolina (UofSC) through the Department of Energy (DOE) Office of Nuclear Energy’s Nuclear Energy University Programs
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Nuclear Energy and Engineering,Nuclear and High Energy Physics
Link
https://ieeexplore.ieee.org/ielam/23/9858187/9759369-aam.pdf
Reference48 articles.
1. Correlation of Deep Levels With Detector Performance in 4H-SiC Epitaxial Schottky Barrier Alpha Detectors
2. The effect of incremental gamma-ray doses and incremental neutron fluences upon the performance of self-biased 10B-coated high-purity epitaxial GaAs thermal neutron detectors
3. Effect of Neutron Irradiation on High Voltage 4H-SiC Vertical JFET Characteristics: Characterization and Modeling
4. Radiation detection using fully depleted 50 μm thick Ni/n-4H-SiC epitaxial layer Schottky diodes with ultra-low concentration of Z 1 / 2 and E H 6 / 7 deep defects
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1. Design and analysis of novel high-performance thick epitaxial SiC radiation detector with low operating voltage by multiple p-type buried layers;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2024-01
2. Alpha Particle Detection Using Highly Rectifying Ni/Ga2O3/4H-SiC Heteroepitaxial MOS Junction;IEEE Transactions on Electron Devices;2023-12
3. Low-Temperature Annealing of Electron, Neutron, and Proton Irradiation Effects on SiC Radiation Detectors;IEEE Transactions on Nuclear Science;2023-10
4. High Performance Pd/4H-SiC Epitaxial Schottky Barrier Radiation Detectors for Harsh Environment Applications;Micromachines;2023-07-30
5. Self-Biased Mo/n-4H-SiC Schottky Barriers as High-Performance Ultraviolet Photodetectors;IEEE Electron Device Letters;2023-05
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