Deep-Level Transient Spectroscopy and Radiation Detection Performance Studies on Neutron Irradiated 250-<i>μ</i>m-Thick 4H-SiC Epitaxial Layers-Reference-Cited by-同舟云学术

Deep-Level Transient Spectroscopy and Radiation Detection Performance Studies on Neutron Irradiated 250-μm-Thick 4H-SiC Epitaxial Layers

Published:2022-08 Issue:8 Volume:69 Page:1972-1978
ISSN:0018-9499
Container-title:IEEE Transactions on Nuclear Science
language:
Short-container-title:IEEE Trans. Nucl. Sci.

Author:

Kleppinger Joshua W.¹,Chaudhuri Sandeep K.¹^ORCID,Karadavut Omerfaruk¹^ORCID,Nag Ritwik¹,Watson Daniel L. P.²,McGregor Douglas S.²,Mandal Krishna C.¹^ORCID

Affiliation:

1. Department of Electrical Engineering, University of South Carolina (UofSC), Columbia, SC, USA

2. Department of Mechanical and Nuclear Engineering, Kansas State University, Manhattan, KS, USA

Funder

University of South Carolina (UofSC) through the Department of Energy (DOE) Office of Nuclear Energy’s Nuclear Energy University Programs

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Nuclear Energy and Engineering,Nuclear and High Energy Physics

Link

https://ieeexplore.ieee.org/ielam/23/9858187/9759369-aam.pdf

Reference48 articles.

1. Correlation of Deep Levels With Detector Performance in 4H-SiC Epitaxial Schottky Barrier Alpha Detectors

2. The effect of incremental gamma-ray doses and incremental neutron fluences upon the performance of self-biased 10B-coated high-purity epitaxial GaAs thermal neutron detectors

3. Effect of Neutron Irradiation on High Voltage 4H-SiC Vertical JFET Characteristics: Characterization and Modeling

4. Radiation detection using fully depleted 50 μm thick Ni/n-4H-SiC epitaxial layer Schottky diodes with ultra-low concentration of Z 1 / 2 and E H 6 / 7 deep defects

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