Oxide Reliability of SiC MOS Devices
Author:
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx5/4784682/4796060/04796106.pdf?arnumber=4796106
Cited by 22 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Temperature Dependence of 4H-SiC Gate Oxide Breakdown and <i>C</i>-<i>V</i> Properties from Room Temperature to 500 °C;Solid State Phenomena;2024-08-21
2. Design of a 1.2 kV SiC MOSFET with Buried Oxide for Improving Switching Characteristics;Electronics;2024-03-01
3. Enhanced gate biasing resilience in asymmetric and double trench SiC MOSFETs towards generalized highly reliable power electronics;Microelectronics Reliability;2024-03
4. Characterization, Analysis, and Failure Investigation of SiC Materials and Power Devices;2023 20th China International Forum on Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS);2023-11-27
5. Gate Oxide Degradation Condition Monitoring Technique for High-Frequency Applications of Silicon Carbide Power MOSFETs;IEEE Transactions on Power Electronics;2023-01
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