A CMOS 180nm class-AB power amplifier with intergrated phase linearizer for BLE 4.0 achieving 11.5dB gain, 38.4% PAE and 20dBm OIP3-Reference-Cited by-同舟云学术

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A CMOS 180nm class-AB power amplifier with intergrated phase linearizer for BLE 4.0 achieving 11.5dB gain, 38.4% PAE and 20dBm OIP3

Published:2017-10 Issue: Volume: Page:
ISSN:
Container-title:2017 IEEE Asia Pacific Conference on Postgraduate Research in Microelectronics and Electronics (PrimeAsia)
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Author:

Gunasegaran Premmilaah,Rajendran Jagadheswaran,Ramiah Harikrishnan

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/8269347/8280348/08280364.pdf?arnumber=8280364

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A 2.4 GHz Fully Integrated, 50-Ohm Matched Power Amplifier for Bluetooth Application;2023 International Symposium on Ultrafast Phenomena and Terahertz Waves (ISUPTW);2023-09-08

2. Linearity Improvement of the CMOS Power Amplifier with Auxiliary Path;2022 Iranian International Conference on Microelectronics (IICM);2022-12-20

3. Design of radio frequency power amplifier for 2.45 GHz IoT application using 0.18 µm CMOS technology;Microelectronics International;2022-10-18

4. Study on a $0.13-\upmu \mathrm{m}$ CMOS Class-E 2.4 GHz Adjustable Power Amplifier for IoT Application;2022 International Conference on Microwave and Millimeter Wave Technology (ICMMT);2022-08-12

5. A fully matched dual stage CMOS power amplifier with integrated passive linearizer attaining 23 db gain, 40% PAE and 28 DBM OIP3;Microelectronics International;2021-08-09

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