A Compact 275 GHz Harmonic VCO with -2.6 dBm Output Power in a 130 nm SiGe Process

Author:

Khiyabani Somayeh,Khatibi Hamid,Afshari Ehsan

Publisher

IEEE

Cited by 10 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. A 360 GHz Fully Integrated Differential Signal Source With 106.7 GHz Continuous Tuning Range in 90 nm SiGe:C BiCMOS;IEEE Transactions on Microwave Theory and Techniques;2024-08

2. 230 GHz Signal Generator for High-Bandwidth Data Links in 130 nm SiGe BiCMOS;2024 IEEE 24th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF);2024-01-21

3. A 330-GHz Wide Tuning Range VCO Based on Common-Base Cross-Coupled Topology in SiGe BiCMOS Technology;IEEE Microwave and Wireless Technology Letters;2023-10

4. A High Efficiency Push-Push Colpitts VCO With Common Base Buffer;2023 International Conference on Microwave and Millimeter Wave Technology (ICMMT);2023-05-14

5. A 267 GHz Wide Tuning Range VCO With −3.5 dBm Peak Output Power in 40-nm CMOS;IEEE Transactions on Terahertz Science and Technology;2023-03

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