Design and Investigation of Junctionless N+ Pocket Doped Vertical-TFET with Binary Metal Alloy $P_{\alpha}Q

登录注册会员服务联系我们

Design and Investigation of Junctionless N+ Pocket Doped Vertical-TFET with Binary Metal Alloy $P_{\alpha}Q_{1-\alpha}$

Published:2024-06-21 Issue: Volume:13 Page:1-6
ISSN:
Container-title:2024 IEEE 3rd International Conference on Electrical Power and Energy Systems (ICEPES)
language:
Short-container-title:

Author:

Wadhwa Girish¹,Srivastava Nishant²,Mani Prashant³,Thakur Anchal⁴

Affiliation:

1. Amity School of Engineering and Technology, Amity University Punjab,Mohali,Punjab,India,140306

2. SRM-IST DELHI-NCR Campus,Modinagar, Ghaziabad,India,201204

3. Government College of Engineering, Aurangabad, Bihar Engineering University,Department of ECE,Patna,Bihar,India

4. Chitkara University Institute of Engineering and Technology, Chitkara University,Punjab,India

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx8/10652596/10653458/10653488.pdf?arnumber=10653488

Reference35 articles.

1. Doping of n and p polysilicon in a dual-gate process;Wong;IEDM Tech. Dig.,1988

2. Design and Investigation of Doped Triple Metal Double Gate Vertical TFET for Performance Enhancement

3. Subthreshold Performance Analysis of Germanium Source Dual Halo Dual Dielectric Triple Material Surrounding Gate Tunnel Field Effect Transistor for Ultra Low Power Applications

4. Design and Analysis of Junctionless-Based Gate All Around N+ Doped Layer Nanowire TFET Biosensor

5. Understanding the Potential and Limitations of Tunnel FETs for Low-Voltage Analog/Mixed-Signal Circuits

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP