Saturation of Transient Current Read at Millisecond-Scale in MOS Capacitor with Ultra-Thin Oxide when Switching
Author:
Affiliation:
1. Graduate Institute of Electronics Engineering, National Taiwan University,Taipei,Taiwan
Funder
Ministry of Science and Technology of Taiwan, ROC
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10133934/10133941/10134352.pdf?arnumber=10134352
Reference4 articles.
1. An Analytical Model for the Electrostatics of Reverse-Biased Al/SiO₂/Si(p) MOS Capacitors With Tunneling Oxide
2. on the determination of minority carrier lifetime from the transient response of an mos capacitor;heiman;IEEE Transactions on Electron Devices,1967
3. Transient Current Enhancement in MIS Tunnel Diodes With Lateral Electric Field Induced by Designed High-Low Oxide Layers
4. Fundamentals of Modern VLSI Devices
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1. Analytical Modeling of the Temporal Response of the Transient Displacement Currents in MIS Tunnel Diodes Under Low-Voltage Operation;IEEE Transactions on Electron Devices;2024-02
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