Formation of porous Ga<sub>2</sub>O<sub>3</sub>/GaAs layers for electronic devices-Reference-Cited by-同舟云学术

Formation of porous Ga₂O₃/GaAs layers for electronic devices

Published:2022-02-22 Issue: Volume: Page:
ISSN:
Container-title:2022 IEEE 16th International Conference on Advanced Trends in Radioelectronics, Telecommunications and Computer Engineering (TCSET)
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Author:

Suchikova Yana¹,Lazarenko Andriy¹,Kovachov Sergii¹,Usseinov Abay²,Karipbaev Zhakyp²,Popov Anatoli I.³

Affiliation:

1. Berdyansk State Pedagogical University,Berdyansk,Ukraine

2. L.N. Gumilyov Eurasian National University,Nur-Sultan,Kazakhstan,010008

3. Institute of Solid State Physics University of Latvia,Riga,Latvia,LV-1063

Funder

European Union's Horizon 2020 Framework Programme

Ministry of Education and Science of the Republic of Kazakhstan

Publisher

IEEE

Link

Reference23 articles.

1. Investigation of N2 plasma GaAs surface passivation efficiency against air exposure: towards an enhanced diode;mehdi;Applied Surface Science,2021

2. Response improvement of GaAs two-dimensional non-layered sheet photodetector through sulfur passivation and plasma treatment;shuai;Vacuum,2021

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