A Novel Wavy Channel Gate-All-Around FETs for Next-Generation CMOS Applications-Reference-Cited by-同舟云学术

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A Novel Wavy Channel Gate-All-Around FETs for Next-Generation CMOS Applications

Published:2023-07-02 Issue: Volume: Page:
ISSN:
Container-title:2023 IEEE 23rd International Conference on Nanotechnology (NANO)
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Author:

Halder Ranita¹,Das Uttam Kumar¹,Ansari Md. Hasan Raza¹,El-Atab Nazek¹

Affiliation:

1. King Abdullah University of Science and Technology (KAUST),Smart Advanced Memory Devices and Applications (SAMA) Labs, Electrical and Computer Engineering Program, Computer, Electrical and Mathematical Science and Engineering Division (CEMSE),Thuwal,Saudi Arabia,23955-6900

Funder

King Abdullah University of Science and Technology Semiconductors Initiative

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10231127/10231154/10231237.pdf?arnumber=10231237

Reference23 articles.

1. Power and Technology Scaling into the 5 nm Node with Stacked Nanosheets

2. Vertically-Stacked Silicon Nanosheet Field Effect Transistors at 3nm Technology Nodes

3. Single InAs/GaSb Nanowire Low-Power CMOS Inverter

4. Performance improvement of spacer engineered n-type SOI FinFET at 3-nm gate length

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